From our research and development efforts, our scientists have created a compact gallium arsenide-based switch capable of handling ultrahigh voltages (over 75,000 V) and current densities in less than a billionth of a second, with ultralow jitter.
Applications that require rapid application of high voltages will benefit from this technology breakthrough. The initial application for IBIS™ PCSS enable a portable capability for future nuclear weapon effects evaluations to ensure sufficiently hardened equipment.
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UES' IBIS PCSS photoconductor switch was selected by an independent judging panel and the editors of R&D Magazine as a winner of a 2015 R&D 100 Award in the IT/Electrical category.
R&D 100 Awards recognize the 100 most technologically significant products introduced in the past year.