IBIS™ Photoconductive Semiconductor Switch
UES has created a compact gallium arsenide-based switch capable of handling ultrahigh voltages (over 75,000 V) and current densities in less than a billionth of a second, with ultralow jitter. Applications which need the rapid application of high voltages will benefit from this technology breakthrough. The initial application for IBIS™ PCSS is to enable a portable capability for future nuclear weapon effects evaluations to ensure sufficiently hardened equipment. IBIS™ PCSS was selected by an independent judging panel and the editors of R&D Magazine as a winner of a 2015 R&D 100 Award in the IT/Electrical category. An R&D 100 Award recognizes the 100 most technologically significant products introduced in the past year. Tap or click here to view PDF with technical data.
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