IBIS Photoconductive Semiconductor Switch

IBIS SwitchThe R&D 100 Award-winning, patent pending UES solution creates compact gallium arsenide based switches capable of handling ultrahigh voltages (over 75,000 V) and current densities in less than a billionth of a second, with ultralow jitter. Advanced pulsed power switching technologies such as IBIS PCSS enable future nuclear weapon effects (NWE) experimentation capabilities and concepts for the active interrogation of special nuclear materials (SNM).

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