IBIS Photoconductive Semiconductor Switch Wins 2015 R&D 100 Awards
November 19, 2015
We're proud to announce that our IBIS™ Photoconductive Semiconductor Switch (PCSS) has been selected by an independent judging panel and the editors of R&D Magazine as a winner of a 2015 R&D 100 Award in the IT/Electrical category. This R&D 100 Award recognizes the 100 most technologically significant products introduced in the past year.
Advanced pulsed power switching technologies such as IBIS PCSS enable future nuclear weapon effects (NWE) experimentation capabilities and concepts for the active interrogation of special nuclear materials (SNM). Dr. Rabi Bhattacharya, Principal Investigator, shared that “The unique, patented UES solutions create compact switches capable of handling ultrahigh voltages (over 75,000 V) and current densities in less than a billionth of a second, with ultralow jitter.”
UES achieved this honor by:
Successfully proposing to and winning consecutive Small Business Innovative Research (SBIR) and Rapid Innovation Fund (RIF) awards from the Defense Threat Reduction Agency (DTRA).
Converting the technology developed in the SBIR process to an electromagnetic pulse generator for nuclear pulse simulation, in partnership with L3 Inc.
“I’m grateful for the consistent partnerships and support from Hoa Nguyen of DTRA, and Doug Weidenheimer at L3”, adds Dr. Bhattacharya.
Of the recognition, Dr. Nina Joshi, CEO, said “The R&D 100 Awards are truly the Oscars of Innovation. This recognition highlights UES’ core strengths of developing and incubating an innovative technology, and working well with key stakeholders to bring it to reality. We welcome more such projects. We look forward to the finals in November 2015.”